onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

RS Stock No.:: 862-4954
Mfr. Part No.:: MJ11012G
Manufacturer:: onsemi

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 2)**

MYR37.44

2 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Pack**
2 - 24	MYR37.44	MYR74.88
26 - 48	MYR36.93	MYR73.86
50 +	MYR36.195	MYR72.39

**price indicative

RS Stock No.:: 862-4954
Mfr. Part No.:: MJ11012G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	60 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204AA
Mounting Type	Through Hole
Pin Count	2
Transistor Configuration	Single
Number of Elements per Chip	2
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	60 V
Maximum Collector Emitter Saturation Voltage	4 V
Minimum Operating Temperature	-55 °C
Maximum Power Dissipation	200 W
Maximum Operating Temperature	+200 °C
Height	8.51mm
Dimensions	21.08 (Dia.) x 8.51mm

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

FREE delivery for orders over MYR700.00

NPN Darlington Transistors, ON Semiconductor

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