onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS Stock No.:: 790-5315P
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

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Bulk discount available

Price Each (Supplied in a Tube)**

MYR2.841

Available for back order.*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit
30 - 30	MYR2.808
45 +	MYR2.76

**price indicative

Alternative

This product is not currently available. Here is our alternative recommendation.

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS Stock No.: 178-4811

Each (In a Tube of 75)

MYR2.423

RS Stock No.:: 790-5315P
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

Datasheet - MJD112-1G
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Dimensions	6.73 x 2.38 x 6.35mm
Width	2.38mm
Height	6.35mm
Length	6.73mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-65 °C
Maximum Power Dissipation	20 W

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

FREE delivery for orders over MYR700.00

Alternative

NPN Darlington Transistors, ON Semiconductor

Standards