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    onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

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    Subtotal (1 reel of 2500 units)**

    MYR3,842.50

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    2500 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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    2500 - 2500MYR1.537MYR3,842.50
    5000 - 7500MYR1.503MYR3,757.50
    10000 +MYR1.476MYR3,690.00

    **price indicative

    RS Stock No.:
    125-0070
    Mfr. Part No.:
    MJD112T4G
    Manufacturer:
    onsemi
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    Brand

    onsemi

    Transistor Type

    NPN

    Maximum Continuous Collector Current

    4 A

    Maximum Collector Emitter Voltage

    100 V

    Maximum Emitter Base Voltage

    5 V

    Package Type

    DPAK (TO-252)

    Mounting Type

    Surface Mount

    Pin Count

    3

    Transistor Configuration

    Single

    Number of Elements per Chip

    1

    Minimum DC Current Gain

    200

    Maximum Base Emitter Saturation Voltage

    4 V

    Maximum Collector Base Voltage

    100 V

    Maximum Collector Emitter Saturation Voltage

    3 V

    Maximum Collector Cut-off Current

    0.02mA

    Maximum Operating Temperature

    +150 °C

    Minimum Operating Temperature

    -65 °C

    Height

    2.38mm

    Width

    6.22mm

    Dimensions

    6.73 x 6.22 x 2.38mm

    Length

    6.73mm

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