onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

RS Stock No.:: 463-016P
Mfr. Part No.:: MJD112T4G
Manufacturer:: onsemi

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

MYR2.233

4940 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit
20 +	MYR2.233

**price indicative

RS Stock No.:: 463-016P
Mfr. Part No.:: MJD112T4G
Manufacturer:: onsemi

MJD112 (NPN), MJD117 (PNP), Complementary Darlington Power Transistors
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	4 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	0.02mA
Dimensions	6.73 x 6.22 x 2.38mm
Length	6.73mm
Width	6.22mm
Height	2.38mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-65 °C

onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

FREE delivery for orders over MYR700.00

NPN Darlington Transistors, ON Semiconductor

Standards