JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 749-8274
Mfr. Part No.DSK9J01P0L
BrandPanasonic
MYR0.817
Each (In a Pack of 20)
units
N 1 → 3mA - - -55V Single Single - Surface Mount SSMini3 F3 B 3 - - 1.6 x 0.85 x 0.7mm
RS Stock No. 169-7869
Mfr. Part No.DSK9J01P0L
BrandPanasonic
MYR0.705
Each (On a Reel of 3000)
units
N 1 → 3mA - - -55V Single Single - Surface Mount SSMini3 F3 B 3 - - 1.6 x 0.85 x 0.7mm
RS Stock No. 749-8268
Mfr. Part No.DSK5J01R0L
BrandPanasonic
MYR0.468
Each (In a Pack of 20)
units
N 5 → 12mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS Stock No. 169-7870
Mfr. Part No.DSK9J01Q0L
BrandPanasonic
MYR0.798
Each (On a Reel of 3000)
units
N 2 → 6.5mA - - -55V Single Single - Surface Mount SSMini3 F3 B 3 - - 1.6 x 0.85 x 0.7mm
RS Stock No. 169-7867
Mfr. Part No.DSK5J01P0L
BrandPanasonic
MYR0.645
Each (On a Reel of 3000)
units
N 1 → 3mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS Stock No. 749-8277
Mfr. Part No.DSK9J01Q0L
BrandPanasonic
MYR1.22
Each (In a Pack of 20)
units
N 2 → 6.5mA - - -55V Single Single - Surface Mount SSMini3 F3 B 3 - - 1.6 x 0.85 x 0.7mm
RS Stock No. 169-7868
Mfr. Part No.DSK5J01R0L
BrandPanasonic
MYR0.728
Each (On a Reel of 3000)
units
N 5 → 12mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS Stock No. 749-8265
Mfr. Part No.DSK5J01P0L
BrandPanasonic
MYR1.261
Each (In a Pack of 20)
units
N 1 → 3mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm