- RS Stock No.:
- 215-5864
- Mfr. Part No.:
- 47L64-I/SN
- Manufacturer:
- Microchip
Available for back order.
Added
Price Each (In a Tube of 100)
MYR8.345
Units | Per Unit | Per Tube* |
100 - 100 | MYR8.345 | MYR834.50 |
200 - 300 | MYR8.162 | MYR816.20 |
400 + | MYR8.012 | MYR801.20 |
*price indicative |
- RS Stock No.:
- 215-5864
- Mfr. Part No.:
- 47L64-I/SN
- Manufacturer:
- Microchip
Technical data sheets
Legislation and Compliance
Product Details
The Microchip EERAM is an SRAM that doesn't lose its content on a power disruption. Inside each memory cell, transparent to the user, are non-volatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue.
8,192 x 8 bit Serial SRAM with internal non-volatile data backup
I2C Interface: Up to 3MHz with Schmitt trigger inputs for noise suppression
Low-Power CMOS Technology: Active current: 5 mA (maximum)
I2C Interface: Up to 3MHz with Schmitt trigger inputs for noise suppression
Low-Power CMOS Technology: Active current: 5 mA (maximum)
Standby current: 500 μA (maximum)
Hibernate current: 3 μA (maximum)
Cell-Based Non-volatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time)
Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, SRAM automatically restored on VCC return
100,000 Backups Minimum (at 20°C)
100 years retention (at 20°C)
Cell-Based Non-volatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time)
Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, SRAM automatically restored on VCC return
100,000 Backups Minimum (at 20°C)
100 years retention (at 20°C)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Memory Size | 64kbit |
Organisation | 8k x 8 bit |
Number of Words | 8k |
Number of Bits per Word | 8bit |
Maximum Random Access Time | 550ns |
Clock Frequency | 1MHz |
Low Power | Yes |
Timing Type | Synchronous |
Mounting Type | Surface Mount |
Package Type | SOIC-8 |
Pin Count | 8 |
Dimensions | 4.9 x 3.9 x 1.5mm |
Height | 1.5mm |
Maximum Operating Supply Voltage | 3.6 V |
Width | 3.9mm |
Length | 4.9mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +85 °C |
Minimum Operating Supply Voltage | 2.7 V |