Cypress Semiconductor, CY7C1049G30-10VXI

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

CY7C1049G and CY7C1049GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip-enable options and in multiple pin configurations. The CY7C1049GE device includes an ERR pin that signals an error-detection and correction event during a read cycle. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0through I/O7 and address on A0 through A18 pins. Data reads are performed by asserting the Chip Enable (CE) and Output Enable (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7).

High speedtAA = 10 nsEmbedded ECC for single-bit error correction[1, 2]Low active and standby currentsActive current: ICC = 38 mA typicalStandby current: ISB2 = 6 mA typicalOperating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and4.5 V to 5.5 V1.0-V data retention TTL-compatible inputs and outputsError indication (ERR) pin to indicate 1-bit error detection and correctionPb-free 36-pin SOJ and 44-pin TSOP II packages

Attribute Value
Memory Size 4Mbit
Organisation 512 k x 8 bit
Number of Words 512 k
Number of Bits per Word 8bit
Maximum Random Access Time 10ns
Address Bus Width 8bit
Clock Frequency 100MHz
Timing Type Asynchronous
Mounting Type Through Hole
Package Type SOJ
Pin Count 36
Dimensions 0.92 x 0.395 x 0.103in
Height 2.62mm
Width 10.03mm
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2.2 V
Length 23.37mm
Maximum Operating Supply Voltage 3.6 V
Maximum Operating Temperature +85 °C
132 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 2)
MYR 33.50
Per unit
Per Pack*
2 - 8
10 - 18
20 - 48
50 +
*price indicative
Packaging Options: