Cypress Semiconductor SRAM, CY62157ELL-45ZSXI- 8Mbit, 5

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Industrial: –40 °C to +85 °C
Automotive-E: –40 °C to +125 °C
Wide voltage range: 4.5 V–5.5 V
Ultra low standby power
Typical standby current: 2 μA
Maximum standby current: 8 μA (Industrial)
Ultra low active power
Typical active current: 1.8 mA at f = 1 MHz
Ultra low standby power
Easy memory expansion with CE1, CE2 and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package

SRAM (Static Random Access Memory)

Attribute Value
Memory Size 8Mbit
Organisation 512K x 16 bit
Number of Words 512K
Number of Bits per Word 16bit
Maximum Random Access Time 45ns
Address Bus Width 16bit
Clock Frequency 1MHz
Low Power Yes
Mounting Type Surface Mount
Package Type TSOP
Pin Count 44
Dimensions 18.51 x 10.26 x 1.04mm
Height 1.04mm
Minimum Operating Supply Voltage 4.5 V
Length 18.51mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature -85 °C
Maximum Operating Supply Voltage 5.5 V
Width 10.26mm
Temporarily out of stock - back order for despatch 04/05/2020, delivery within 4 working days from despatch date
Price Each
MYR 45.24
Per unit
1 - 9
10 - 24
25 - 99
100 - 499
500 +
Packaging Options:
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