Winbond, W971GG8SB25I

  • RS Stock No. 188-2782
  • Mfr. Part No. W971GG8SB25I
  • Manufacturer Winbond
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and DQS) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and CLK)
Data masks (DM) for write data
Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
Posted CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
Packaged in WBGA 60 Ball (8x12.5 mm2), using Lead free materials.

Specifications
Attribute Value
Memory Size 1Gbit
Organisation 128M x 8 bit
Number of Bits per Word 8bit
Number of Words 128M
Mounting Type Surface Mount
Package Type WBGA
Pin Count 60
Dimensions 12.6 x 8.1 x 0.6mm
Height 0.6mm
Length 12.6mm
Width 8.1mm
Minimum Operating Supply Voltage 1.7 V
Maximum Operating Supply Voltage 1.9 V
Maximum Operating Temperature +95 °C
Minimum Operating Temperature -40 °C
205 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 5)
MYR 17.86
units
Per unit
Per Pack*
5 - 5
MYR17.86
MYR89.30
10 - 15
MYR16.22
MYR81.10
20 - 45
MYR15.90
MYR79.50
50 - 95
MYR15.84
MYR79.20
100 +
MYR14.20
MYR71.00
*price indicative
Packaging Options:
Related Products
This is a 1Gb Low Power DDR SDRAM ...
Description:
This is a 1Gb Low Power DDR SDRAM organized as 16M words x 4 banks x 16bits. Power supply VDD = 1.7V∼1.95V、VDDQ = 1.7V∼1.95VData width: x16Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHzStandard Self Refresh ModePASR、ATCSR、Power Down Mode、DPDProgrammable output ...
The W9751G6KB is a 512M bits DDR2 SDRAM, ...
Description:
The W9751G6KB is a 512M bits DDR2 SDRAM, and speed involving -18, 18I, -25, 25L, 25I and -3. Double Data Rate architecture: two data transfers per clock cycleCAS Latency: 3, 4, 5, 6 and 7Burst Length: 4 and 8Bi-directional, differential ...
The W9725G6KB is a 256M bits DDR2 SDRAM, ...
Description:
The W9725G6KB is a 256M bits DDR2 SDRAM, and speed involving -18, -25, 25I and -3. Double Data Rate architecture: two data transfers per clock cycleCAS Latency: 3, 4, 5, 6 and 7Burst Length: 4 and 8Bi-directional, differential data strobes ...
W9464G6KH is a 64M DDR SDRAM and speed ...
Description:
W9464G6KH is a 64M DDR SDRAM and speed involving -5 and -5I. 2.5V ±0.2V Power Supply for DDR400Up to 200 MHz Clock FrequencyDouble Data Rate architecture, two data transfers per clock cycleDifferential clock inputs (CLK and /CLK)DQS is edge-aligned with ...