ATF-53189-BLK Broadcom, RF Amplifier Linear Amplifier, Low Noise, Power Amplifier, 17.2 dB 6 GHz, 3-Pin SOT-89
- RS Stock No.:
- 812-0528
- Mfr. Part No.:
- ATF-53189-BLK
- Manufacturer:
- Broadcom
Discontinued product
- RS Stock No.:
- 812-0528
- Mfr. Part No.:
- ATF-53189-BLK
- Manufacturer:
- Broadcom
Legislation and Compliance
Product Details
GaAs FET RF Transistors, Avago Technologies
GaAs FET RF transistors are ideal for the first or second stage of base station Low Noise Amplifiers (LNA). The specifications exhibit an excellent combination of low noise figure and enhanced linearity. These GaAs MESFET RF transistors from Avago Technologies are designed for use in wireless and high frequency applications.
MESFET Transistors, Avago Technologies
Metal-semiconductor field-effect transistors (MESFETs) offer better high-frequency performance than their JFET and MOSFET counterparts. They are frequently used in low-noise front-end RF amplifiers and microwave receivers.
Specifications
Attribute | Value |
|---|---|
| Amplifier Type | Linear Amplifier, Low Noise, Power Amplifier |
| Typical Power Gain | 17.2 dB |
| Typical Output Power | 23dBm |
| Typical Noise Figure | 0.85dB |
| Number of Channels per Chip | 1 |
| Maximum Operating Frequency | 6 GHz |
| Mounting Type | Surface Mount |
| Package Type | SOT-89 |
| Pin Count | 3 |
| Dimensions | 4.6 x 2.6 x 1.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Maximum Operating Temperature | +150 °C |
| Width | 2.6mm |