ATF-55143-BLKG Broadcom, RF Amplifier Low Noise, 21.6 dB 6 GHz, 4-Pin SOT-343

GaAs FET RF transistors are ideal for the first or second stage of base station Low Noise Amplifiers (LNA). The specifications exhibit an excellent combination of low noise figure and enhanced linearity. These GaAs MESFET RF transistors from Avago Technologies are designed for use in wireless and high frequency applications.

MESFET Transistors, Avago Technologies

Metal-semiconductor field-effect transistors (MESFETs) offer better high-frequency performance than their JFET and MOSFET counterparts. They are frequently used in low-noise front-end RF amplifiers and microwave receivers.