Toshiba 650V 10A, SiC Schottky Diode, 2-Pin TO-220 TRS10E65C,S1Q(S
- RS Stock No.:
- 799-5374
- Mfr. Part No.:
- TRS10E65C,S1Q(S
- Manufacturer:
- Toshiba
Discontinued product
- RS Stock No.:
- 799-5374
- Mfr. Part No.:
- TRS10E65C,S1Q(S
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Silicon Carbide (SiC) Schottky Diode, Toshiba
A range of Silicon Carbide (SiC) Schottky barrier diodes from Toshiba suitable for high-efficiency, high speed switching applications.
Low-loss and high-efficiency power conversion
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Diodes and Rectifiers, Toshiba
Specifications
Attribute | Value |
|---|---|
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Maximum Continuous Forward Current | 10A |
| Peak Reverse Repetitive Voltage | 650V |
| Diode Configuration | Single |
| Diode Type | SiC Schottky |
| Pin Count | 2 |
| Maximum Forward Voltage Drop | 1.7V |
| Number of Elements per Chip | 1 |
| Diode Technology | SiC Schottky |
| Peak Non-Repetitive Forward Surge Current | 50A |