ROHM 600V 10A, Diode, 2+Tab-Pin TO-220ACFP RFNL10TJ6SGC9

  • RS Stock No. 171-4052
  • Mfr. Part No. RFNL10TJ6SGC9
  • Manufacturer ROHM
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): KR
Product Details

RFNL10TJ6S is the silicon epitaxial planar type Fast Recovery Diode for PFC.

Ultra low forward voltage
Low switching loss
High current overload capacity

Specifications
Attribute Value
Mounting Type Through Hole
Package Type TO-220ACFP
Maximum Continuous Forward Current 10A
Peak Reverse Repetitive Voltage 600V
Diode Configuration Single
Rectifier Type Fast Recovery
Pin Count 2 + Tab
Maximum Forward Voltage Drop 1.3V
Number of Elements per Chip 1
Diode Technology Silicon Junction
Peak Reverse Recovery Time 150ns
Peak Non-Repetitive Forward Surge Current 120A
450 In Global stock for delivery within 4 - 6 working days
Price Each (In a Tube of 50)
MYR 2.675
units
Per unit
Per Tube*
50 - 50
MYR2.675
MYR133.75
100 - 200
MYR2.468
MYR123.40
250 - 450
MYR2.293
MYR114.65
500 - 950
MYR2.228
MYR111.40
1000 +
MYR2.168
MYR108.40
*price indicative
Related Products
A range of Wolfspeed SiC (Silicon Carbide) Schottky ...
Description:
A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching ...
A range of Wolfspeed SiC (Silicon Carbide) Schottky ...
Description:
A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching ...
Versatile and high-efficiency Standard Recovery Power Diodes in ...
Description:
Versatile and high-efficiency Standard Recovery Power Diodes in industry-standard package styles.
The Infineon thinQ!™ Generation 5 offers a new ...
Description:
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved ...