Infineon 650V 6A, Diode, 2+Tab-Pin TO-220 IDH06G65C5XKSA1

  • RS Stock No. 133-9889
  • Mfr. Part No. IDH06G65C5XKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

Specifications
Attribute Value
Mounting Type Through Hole
Package Type TO-220
Maximum Continuous Forward Current 6A
Peak Reverse Repetitive Voltage 650V
Diode Configuration Single
Diode Type SiC Schottky
Pin Count 2 + Tab
Maximum Forward Voltage Drop 2.1V
Number of Elements per Chip 1
Diode Technology SiC Schottky
Peak Non-Repetitive Forward Surge Current 54A
198 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 2)
MYR 14.11
units
Per unit
Per Pack*
2 - 8
MYR14.11
MYR28.22
10 - 98
MYR11.895
MYR23.79
100 - 248
MYR10.225
MYR20.45
250 +
MYR8.725
MYR17.45
*price indicative
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