N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220AB Vishay SUP50020E-GE3
- RS Stock No.:
- 134-9705
- Mfr. Part No.:
- SUP50020E-GE3
- Manufacturer:
- Vishay
36 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 2)
MYR12.79
| Units | Per Unit | Per Pack* |
| 2 + | MYR12.79 | MYR25.58 |
| *price indicative | ||
- RS Stock No.:
- 134-9705
- Mfr. Part No.:
- SUP50020E-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4.65mm |
| Maximum Operating Temperature | +175 °C |
| Length | 10.51mm |
| Typical Gate Charge @ Vgs | 126 nC @ 10 V |
| Forward Diode Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Height | 15.49mm |