ON Semi MMBT3904LT1G NPN Transistor, 200 mA, 40 V, 3-Pin SOT-23

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CZ
Product Details

Small Signal NPN Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MMBT3904LT1G is an NPN bipolar transistor designed for linear and switching applications.
The MMBT3904LT1G comes in a SOT-23 3-pin package.

Versions Available:
545-0343 - pack of 50
103-2948 - reel 3000

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 200 mA
Maximum Collector Emitter Voltage 40 V
Package Type SOT-23
Mounting Type Surface Mount
Maximum Power Dissipation 300 mW
Minimum DC Current Gain 40
Transistor Configuration Single
Maximum Collector Base Voltage 60 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 300 MHz
Pin Count 3
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Maximum Base Emitter Saturation Voltage 0.95 V
Dimensions 0.94 x 2.9 x 1.3mm
Length 2.9mm
Width 1.3mm
Maximum Collector Emitter Saturation Voltage 0.3 V
Maximum Operating Temperature +150 °C
Height 0.94mm
174000 Within 4 working day(s) (Global stock)
2162 Within 6 working day(s) (Global stock)
Price Each (On a Reel of 3000)
MYR 0.078
units
Per unit
Per Reel*
3000 - 3000
MYR0.078
MYR234.00
6000 - 9000
MYR0.077
MYR231.00
12000 - 27000
MYR0.07
MYR210.00
30000 - 57000
MYR0.066
MYR198.00
60000 +
MYR0.064
MYR192.00
*price indicative
Related Products
Description:
Up to 60 V VCEO and up to 800 mA IC, Delivering shorter storage times and significantly reduced switching times, our NPN and PNP switching transistors give you a design advantage. You can choose from a sizeable portfolio, with devices ...
40 V, 15 A NPN high power bipolar ...
Description:
40 V, 15 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60415PY. High thermal power dissipation capabilityHigh temperature applications up to 175 °CReduced Printed Circuit ...
For today’s increasingly efficient systems – where both ...
Description:
For today’s increasingly efficient systems – where both power and space are at a premium – we offer SMD packages includes our ultra small leadless housing SOT883. Ultra small 1006 sized SOT883 (SC-101) leadless packageBroad choice of SMD and leaded ...
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors ...