Cypress Semiconductor, CY14V101QS-SF108X

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

The Cypress CY14V101QS combines a 1-Mbit nvSRAM with a QPI interface. The QPI allows writing and reading the memory in either a single (one I/O channel for one bit per clock cycle), dual (two I/O channels for two bits per clock cycle), or quad (four I/O channels for four bits per clock cycle) through the use of selected opcodes. The memory is organized as 128Kbytes each consisting of SRAM and nonvolatile SONOS Quantum Trap cells. The SRAM provides infinite read and write cycles, while the nonvolatile cells provide highly reliable storage of data. Data transfers from SRAM to the nonvolatile cells (STORE operation) take place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile cells (RECALL operation). You can also initiate the STORE and RECALL operations through SPI instructions.

Specifications
Attribute Value
Memory Size 1Mbit
Organisation 128K x 8 bit
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 16
Dimensions 10.49 x 7.59 x 2.36mm
Length 10.49mm
Width 7.59mm
Height 2.36mm
Maximum Operating Supply Voltage 3.6 V
Maximum Operating Temperature +85 °C
Minimum Operating Temperature -40 °C
Number of Words 128K
Number of Bits per Word 8bit
Minimum Operating Supply Voltage 2.7 V
22 In Global stock for delivery within 4 - 6 working days
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