Cypress Semiconductor, CY14B104NA-BA25XI

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

Attribute Value
Memory Size 4Mbit
Organisation 256K x 16 bit
Interface Type Parallel
Data Bus Width 16bit
Maximum Random Access Time 45ns
Mounting Type Surface Mount
Package Type FBGA
Pin Count 48
Dimensions 10 x 6 x 0.21mm
Length 10mm
Width 6mm
Height 0.21mm
Maximum Operating Supply Voltage 3.6 V
Maximum Operating Temperature +85 °C
Number of Words 256K
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2.7 V
Number of Bits per Word 16bit
Temporarily out of stock - back order for despatch 12/10/2020, delivery within 4 working days from despatch date
Price Each (In a Tray of 299)
Was MYR148.844
MYR 108.671
Per unit
Per Tray*
299 +
*price indicative