N-Channel MOSFET, 130 A, 710 V, 3-Pin Max247 STMicroelectronics STY139N65M5
- RS Stock No.:
- 920-8815
- Mfr. Part No.:
- STY139N65M5
- Manufacturer:
- STMicroelectronics
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Added
Price Each (In a Tube of 30)
MYR175.183
| Units | Per Unit | Per Tube* |
| 30 - 60 | MYR175.183 | MYR5,255.49 |
| 90 + | MYR169.928 | MYR5,097.84 |
| *price indicative | ||
- RS Stock No.:
- 920-8815
- Mfr. Part No.:
- STY139N65M5
- Manufacturer:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 130 A |
| Maximum Drain Source Voltage | 710 V |
| Package Type | Max247 |
| Series | MDmesh M5 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 17 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 625 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 5.3mm |
| Typical Gate Charge @ Vgs | 363 nC @ 10 V |
| Length | 15.9mm |
| Height | 20.3mm |