N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXYS IXFH26N50P
- RS Stock No.:
- 920-0773
- Mfr. Part No.:
- IXFH26N50P
- Manufacturer:
- IXYS
60 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Tube of 30)
MYR34.751
| Units | Per Unit | Per Tube* |
| 30 - 30 | MYR34.751 | MYR1,042.53 |
| 60 - 90 | MYR34.056 | MYR1,021.68 |
| 120 + | MYR33.375 | MYR1,001.25 |
| *price indicative | ||
- RS Stock No.:
- 920-0773
- Mfr. Part No.:
- IXFH26N50P
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 26 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-247 |
| Series | HiperFET, Polar |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 230 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Power Dissipation | 400 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 5.3mm |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V |
| Length | 16.26mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Height | 21.46mm |
| Minimum Operating Temperature | -55 °C |