N-Channel MOSFET, 29 A, 55 V, 3-Pin TO-220AB Infineon IRFZ34NPBF

RS Stock No.:: 919-4766
Mfr. Part No.:: IRFZ34NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 29 A, 55 V, 3-Pin TO-220AB Infineon IRFZ34NPBF

1100 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Added

Price Each (In a Tube of 50)

MYR4.142

Units	Per Unit	Per Tube*
50 - 50	MYR4.142	MYR207.10
100 - 150	MYR4.078	MYR203.90
200 +	MYR3.999	MYR199.95
*price indicative

RS Stock No.:: 919-4766
Mfr. Part No.:: IRFZ34NPBF
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	40 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	68 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	34 nC @ 10 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	8.77mm