C3M0120090D SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed

  • RS Stock No. 915-8849P
  • Mfr. Part No. C3M0120090D
  • Manufacturer Wolfspeed
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Attribute Value
Channel Type N
Maximum Continuous Drain Current 23 A
Maximum Drain Source Voltage 900 V
Maximum Drain Source Resistance 155 mΩ
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 1.8V
Maximum Gate Source Voltage -8 V, +18 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 97 W
Number of Elements per Chip 1
Forward Diode Voltage 4.8V
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 17.3 nC @ 15 V
Height 5.21mm
Width 21.1mm
Length 16.13mm
Transistor Material SiC
Maximum Operating Temperature +150 °C
2355 In Global stock for delivery within 4 - 6 working days
Price Each (Supplied in a Tube)
MYR 36.71
Per unit
5 - 9
10 - 29
30 - 89
90 +
Packaging Options: