P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 Infineon SPP15P10PHXKSA1

RS Stock No.:: 914-0191
Mfr. Part No.:: SPP15P10PHXKSA1
Manufacturer:: Infineon

P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 Infineon SPP15P10PHXKSA1

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Added

Price Each (In a Pack of 10)

MYR8.746

Units	Per Unit	Per Pack*
10 - 90	MYR8.746	MYR87.46
100 - 490	MYR8.074	MYR80.74
500 - 990	MYR7.496	MYR74.96
1000 - 2490	MYR7.005	MYR70.05
2500 +	MYR6.617	MYR66.17
*price indicative

RS Stock No.:: 914-0191
Mfr. Part No.:: SPP15P10PHXKSA1
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	15 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	240 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	128 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.36mm
Width	4.57mm
Typical Gate Charge @ Vgs	37 nC @ 10 V
Number of Elements per Chip	1
Series	SIPMOS
Height	15.95mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.35V