- RS Stock No.:
- 911-0838
- Mfr. Part No.:
- IPD110N12N3GATMA1
- Manufacturer:
- Infineon
Discontinued product
- RS Stock No.:
- 911-0838
- Mfr. Part No.:
- IPD110N12N3GATMA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 75 A |
Maximum Drain Source Voltage | 120 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 11 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 136 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Width | 6.22mm |
Typical Gate Charge @ Vgs | 49 nC @ 10 V |
Length | 6.73mm |
Height | 2.41mm |
Minimum Operating Temperature | -55 °C |
Series | OptiMOS 3 |