N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT020N10N3ATMA1
- RS Stock No.:
- 906-4356P
- Mfr. Part No.:
- IPT020N10N3ATMA1
- Manufacturer:
- Infineon
3988 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
MYR40.535
| Units | Per Unit |
| 500 - 998 | MYR40.535 |
| 1000 + | MYR39.325 |
- RS Stock No.:
- 906-4356P
- Mfr. Part No.:
- IPT020N10N3ATMA1
- Manufacturer:
- Infineon
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 A |
| Maximum Drain Source Voltage | 100 V |
| Series | OptiMOS 3 |
| Package Type | HSOF-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 3.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 10.58mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 156 nC @ 10 V |
| Width | 10.1mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 2.4mm |
| Forward Diode Voltage | 1V |