N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S5VX(J
This image is representative of the product range
140 Within 4 working day(s) (Global stock)
295 Within 6 working day(s) (Global stock)
Price Each (In a Pack of 5)
MYR7.87
| units | Per unit | Per Pack* |
| 5 - 20 | MYR7.87 | MYR39.35 |
| 25 - 120 | MYR6.896 | MYR34.48 |
| 125 - 245 | MYR6.212 | MYR31.06 |
| 250 - 495 | MYR5.904 | MYR29.52 |
| 500 + | MYR5.768 | MYR28.84 |
| *price indicative | ||
Added
- RS Stock No.:
- 891-2869
- Mfr. Part No.:
- TK10A60W,S5VX(J
- Manufacturer:
- Toshiba
- COO (Country of Origin):
- MY
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 9.7 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 380 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 30 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 4.5mm |
| Height | 15mm |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Length | 10mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.7V |
| Series | TK |
| Transistor Material | Si |