N-Channel MOSFET, 9.2 A, 100 V, 3-Pin TO-220AB Vishay Siliconix IRF520PBF

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Discontinued product

Technical data sheets

MOSFET Transistors, Vishay Semiconductor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.2 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	270 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	60 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Typical Gate Charge @ Vgs	16 nC @ 10 V
Length	10.52mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Width	4.7mm
Forward Diode Voltage	1.8V
Minimum Operating Temperature	-55 °C
Height	15.85mm