- RS Stock No.:
- 823-5554
- Mfr. Part No.:
- IPP80P03P4L04AKSA1
- Manufacturer:
- Infineon
10 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
15 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 5)
MYR13.12
Units | Per Unit | Per Pack* |
5 - 20 | MYR13.12 | MYR65.60 |
25 + | MYR12.726 | MYR63.63 |
*price indicative |
- RS Stock No.:
- 823-5554
- Mfr. Part No.:
- IPP80P03P4L04AKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 30 V |
Series | OptiMOS P |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 7 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 137 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +5 V |
Length | 10mm |
Maximum Operating Temperature | +175 °C |
Typical Gate Charge @ Vgs | 125 nC @ 10 V |
Transistor Material | Si |
Width | 4.4mm |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 15.65mm |