N-Channel MOSFET, 100 A, 600 V, 3-Pin TO-3PL Toshiba TK100L60W,VQ(O
- RS Stock No.:
- 799-4987
- Mfr. Part No.:
- TK100L60W,VQ(O
- Manufacturer:
- Toshiba
51 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR126.10
| Units | Per Unit |
| 1 - 19 | MYR126.10 |
| 20 - 49 | MYR123.47 |
| 50 - 99 | MYR119.76 |
| 100 - 249 | MYR116.82 |
| 250 + | MYR114.25 |
- RS Stock No.:
- 799-4987
- Mfr. Part No.:
- TK100L60W,VQ(O
- Manufacturer:
- Toshiba
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-3PL |
| Series | DTMOSIV |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 18 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 797 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 5mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 360 nC @ 10 V |
| Length | 20mm |
| Transistor Material | Si |
| Height | 26mm |