N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXYS IXFK26N120P
- RS Stock No.:
- 711-5360
- Mfr. Part No.:
- IXFK26N120P
- Manufacturer:
- IXYS
217 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR169.96
| Units | Per Unit |
| 1 - 6 | MYR169.96 |
| 7 - 12 | MYR163.83 |
| 13 + | MYR155.55 |
- RS Stock No.:
- 711-5360
- Mfr. Part No.:
- IXFK26N120P
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 26 A |
| Maximum Drain Source Voltage | 1200 V |
| Series | HiperFET, Polar |
| Package Type | TO-264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 460 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 6.5V |
| Maximum Power Dissipation | 960 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 225 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 5.13mm |
| Transistor Material | Si |
| Length | 19.96mm |
| Minimum Operating Temperature | -55 °C |
| Height | 26.16mm |