NDS7002A N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 280 mA
Maximum Drain Source Voltage 60 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 2 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 300 mW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 2.92mm
Transistor Material Si
Minimum Operating Temperature -65 °C
Maximum Operating Temperature +150 °C
Width 1.3mm
Height 0.93mm
320 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 10)
MYR 0.896
units
Per unit
Per Pack*
10 - 10
MYR0.896
MYR8.96
20 - 40
MYR0.875
MYR8.75
50 - 90
MYR0.384
MYR3.84
100 - 190
MYR0.374
MYR3.74
200 +
MYR0.364
MYR3.64
*price indicative
Packaging Options:
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