P-Channel MOSFET, 6.5 A, 200 V, 3-Pin TO-220AB Vishay IRF9630PBF
- RS Stock No.:
- 541-2515
- Mfr. Part No.:
- IRF9630PBF
- Manufacturer:
- Vishay
17 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
274 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR7.86
| Units | Per Unit |
| 1 + | MYR7.86 |
- RS Stock No.:
- 541-2515
- Mfr. Part No.:
- IRF9630PBF
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements
Ease of paralleling
Simple drive requirements
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 6.5 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 800 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 74 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 10.41mm |
| Width | 4.7mm |
| Typical Gate Charge @ Vgs | 29 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 9.01mm |