Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon IRF7303PBF

RS Stock No.:: 540-9862
Mfr. Part No.:: IRF7303PBF
Manufacturer:: Infineon

Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon IRF7303PBF

This image is representative of the product range

55 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Added

Price Each

MYR1.71

Units	Per Unit
1 - 9	MYR1.71
10 - 49	MYR1.66
50 - 99	MYR1.55
100 - 249	MYR1.52
250 +	MYR1.44

RS Stock No.:: 540-9862
Mfr. Part No.:: IRF7303PBF
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Dual N-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.9 A
Maximum Drain Source Voltage	30 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	50 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Length	5mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	25 nC @ 10 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm