SKM111AR N-Channel MOSFET, 200 A, 100 V, 4-Pin SEMITRANSM1 Semikron

  • RS Stock No. 505-3188
  • Mfr. Part No. SKM111AR
  • Manufacturer Semikron
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Power MOSFET Modules, Semikron

Compact power MOSFET modules from Semikron incorporating single and multiple devices in a variety of configurations. Typical applications include switched mode power supplies, DC servo drives and Uninterruptible Power Supplies

//media.rs-online.com/t_line/LTRANSN-50.gif

MOSFET Transistors, Semikron

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 A
Maximum Drain Source Voltage 100 V
Package Type SEMITRANSM1
Mounting Type Panel Mount
Pin Count 4
Maximum Drain Source Resistance 9 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2.1V
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Transistor Material Si
Maximum Operating Temperature +150 °C
Width 42mm
Height 30mm
Length 78mm
Minimum Operating Temperature -40 °C
68 In Global stock for delivery within 4 - 6 working days
Price Each
MYR 446.53
units
Per unit
1 - 9
MYR446.53
10 - 49
MYR433.14
50 - 99
MYR342.14
100 - 249
MYR333.22
250 +
MYR324.81
Related Products
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
This low threshold, enhancement-mode (normally-off) transistor utilizes a ...
Description:
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient ...