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Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin PG-TO247 Infineon IMW65R048M1HXKSA1

RS Stock No.:
232-0389
Mfr. Part No.:
IMW65R048M1HXKSA1
Manufacturer:
Infineon
Infineon
View all MOSFETs
180 In global stock for delivery within 4 - 6 working days
Add to Basket
units

Added

Price Each (In a Tube of 30)

MYR73.427

unitsPer UnitPer Tube*
30 - 30MYR73.427MYR2,202.81
60 - 60MYR69.756MYR2,092.68
90 +MYR66.269MYR1,988.07
*price indicative
RS Stock No.:
232-0389
Mfr. Part No.:
IMW65R048M1HXKSA1
Manufacturer:
Infineon

Technical data sheets


Legislation and Compliance


Product Details




Specifications

AttributeValue
Channel TypeN
Maximum Continuous Drain Current39 A
Maximum Drain Source Voltage650 V
Package TypePG-TO247
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance0.064 Ω
Channel ModeEnhancement
Maximum Gate Threshold Voltage5.7V
Transistor MaterialSilicon
Number of Elements per Chip1
SeriesCoolSiC
180 In global stock for delivery within 4 - 6 working days
Add to Basket
units

Added

Price Each (In a Tube of 30)

MYR73.427

unitsPer UnitPer Tube*
30 - 30MYR73.427MYR2,202.81
60 - 60MYR69.756MYR2,092.68
90 +MYR66.269MYR1,988.07
*price indicative