NDC7002N Dual N-Channel MOSFET, 510 mA, 50 V, 6-Pin SOT-23 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 510 mA
Maximum Drain Source Voltage 50 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 4 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 960 mW
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Minimum Operating Temperature -55 °C
Width 1.7mm
Typical Gate Charge @ Vgs 1 nC @ 10 V
Height 1mm
Maximum Operating Temperature +150 °C
Length 3mm
Transistor Material Si
15000 In Global stock for delivery within 4 - 6 working days
Price Each (On a Reel of 3000)
MYR 0.466
units
Per unit
Per Reel*
3000 +
MYR0.466
MYR1,398.00
*price indicative
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