N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3

RS Stock No.:: 178-3698
Mfr. Part No.:: SiSS02DN-T1-GE3
Manufacturer:: Vishay Siliconix

N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3

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Added

Price Each (On a Reel of 3000)

MYR3.307

Units	Per Unit	Per Reel*
3000 - 3000	MYR3.307	MYR9,921.00
6000 - 9000	MYR3.234	MYR9,702.00
12000 +	MYR3.175	MYR9,525.00
*price indicative

RS Stock No.:: 178-3698
Mfr. Part No.:: SiSS02DN-T1-GE3
Manufacturer:: Vishay Siliconix

Technical data sheets

Datasheet

Legislation and Compliance

RoHS Status: Not Applicable

COO (Country of Origin):: CN

Product Details

FEATURES
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally
enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
APPLICATIONS
Synchronous rectification
Synchronous buck converter
High power density DC/DC
OR-ing
Load switching

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	25 V
Series	TrenchFET
Package Type	1212
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.2V
Maximum Power Dissipation	65.7 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +16 V
Number of Elements per Chip	1
Width	3.15mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	3.15mm
Typical Gate Charge @ Vgs	55 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.07mm
Forward Diode Voltage	1.1V