- RS Stock No.:
- 178-0834
- Mfr. Part No.:
- IRF830APBF
- Manufacturer:
- Vishay
850 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Tube of 50)
MYR6.555
Units | Per Unit | Per Tube* |
50 - 50 | MYR6.555 | MYR327.75 |
100 - 150 | MYR6.454 | MYR322.70 |
200 + | MYR6.328 | MYR316.40 |
*price indicative |
- RS Stock No.:
- 178-0834
- Mfr. Part No.:
- IRF830APBF
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 5 A |
Maximum Drain Source Voltage | 500 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.4 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 74 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 4.7mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Length | 10.41mm |
Typical Gate Charge @ Vgs | 24 nC @ 10 V |
Height | 9.01mm |
Minimum Operating Temperature | -55 °C |