TN2106K1-G N-Channel MOSFET, 280 mA, 60 (Minimum) V TN2106, 3-Pin SOT-23 Microchip Technology

  • RS Stock No. 177-9691
  • Mfr. Part No. TN2106K1-G
  • Manufacturer Microchip
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 280 mA
Maximum Drain Source Voltage 60 V
Package Type TO-236AB
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 5 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 0.6V
Maximum Power Dissipation 360 mW
Transistor Configuration Single
Maximum Gate Source Voltage 20 V
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Height 1.02mm
Series TN2106
Forward Diode Voltage 1.8V
Minimum Operating Temperature -55 °C
Width 1.4mm
Length 3.04mm
3000 In Global stock for delivery within 4 - 6 working days
Price Each (On a Reel of 3000)
MYR 1.613
units
Per unit
Per Reel*
3000 +
MYR1.613
MYR4,839.00
*price indicative
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