N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220FM ROHM R8010ANX

RS Stock No.:: 172-0513
Mfr. Part No.:: R8010ANX
Manufacturer:: ROHM

N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220FM ROHM R8010ANX

2 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Added

Price Each (In a Pack of 2)

MYR20.56

Units	Per Unit	Per Pack*
2 - 48	MYR20.56	MYR41.12
50 - 98	MYR20.365	MYR40.73
100 - 198	MYR20.11	MYR40.22
200 - 398	MYR19.845	MYR39.69
400 +	MYR19.595	MYR39.19
*price indicative

RS Stock No.:: 172-0513
Mfr. Part No.:: R8010ANX
Manufacturer:: ROHM

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: JP

Product Details

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

10Ｖ-drive type
Nch Power MOSFET
Fast Switching Speed
Drive circuits can be simple
Parallel use is easy
Pb Free

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Voltage	800 V
Package Type	TO-220FM
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	950 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	40 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Width	4.8mm
Number of Elements per Chip	1
Length	10.3mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	62 nC @ 10 V
Height	15.4mm
Forward Diode Voltage	1.5V