N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin DPAK Taiwan Semi TSM2N100CP ROG
- RS Stock No.:
- 171-3707
- Mfr. Part No.:
- TSM2N100CP ROG
- Manufacturer:
- Taiwan Semiconductor
Discontinued product
- RS Stock No.:
- 171-3707
- Mfr. Part No.:
- TSM2N100CP ROG
- Manufacturer:
- Taiwan Semiconductor
Technical data sheets
Legislation and Compliance
Product Details
The Taiwan Semiconductor 1000V, 1. 85A, 8. 5Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in AC/DC LED lighting, power Supply and power meter applications.
100% avalanche tested
Advanced planar process
Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
77W max. power dissipation
Gate threshold voltage ranges between 3.5V-5.5V
Advanced planar process
Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
77W max. power dissipation
Gate threshold voltage ranges between 3.5V-5.5V
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.85 A |
| Maximum Drain Source Voltage | 1000 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 77 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Width | 6.1mm |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 6.6mm |
| Height | 2.3mm |
| Forward Diode Voltage | 1.4V |
| Minimum Operating Temperature | -55 °C |