N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK Taiwan Semi TSM1NB60CH C5G
- RS Stock No.:
- 171-3688
- Mfr. Part No.:
- TSM1NB60CH C5G
- Manufacturer:
- Taiwan Semiconductor
Discontinued product
- RS Stock No.:
- 171-3688
- Mfr. Part No.:
- TSM1NB60CH C5G
- Manufacturer:
- Taiwan Semiconductor
Technical data sheets
Legislation and Compliance
Product Details
The Taiwan Semiconductor 600V, 1A, 10Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power supply, lighting and charger applications.
Advanced planar process
100% avalanche tested
Low RDS(ON) 8Ω (Typ.)
Low gate charge typical @ 6.1 nC (Typ.)
Low Crss typical @4.2pF (Typ.)
Operating temperature ranges between -55 °C to +150 °C
39W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V
100% avalanche tested
Low RDS(ON) 8Ω (Typ.)
Low gate charge typical @ 6.1 nC (Typ.)
Low Crss typical @4.2pF (Typ.)
Operating temperature ranges between -55 °C to +150 °C
39W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 10 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 39 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Typical Gate Charge @ Vgs | 6.1 nC @ 10 V |
| Width | 2.3mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 6.6mm |
| Height | 6.1mm |
| Forward Diode Voltage | 1.4V |
| Minimum Operating Temperature | -55 °C |