N-Channel MOSFET, 23 A, 60 V, 8-Pin SOP Taiwan Semi TSM120N06LCS RLG
- RS Stock No.:
- 171-3677
- Mfr. Part No.:
- TSM120N06LCS RLG
- Manufacturer:
- Taiwan Semiconductor
Discontinued product
- RS Stock No.:
- 171-3677
- Mfr. Part No.:
- TSM120N06LCS RLG
- Manufacturer:
- Taiwan Semiconductor
Technical data sheets
Legislation and Compliance
Product Details
The Taiwan Semiconductor 30V, 55A, 8 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in applications such as motor control for BLDC and battery power management.
Low RDS(ON) to minimize conductive losses
Logic level
Low gate charge for fast power switching
100% UIS and Rg tested
Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
40W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
Logic level
Low gate charge for fast power switching
100% UIS and Rg tested
Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
40W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 23 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOP |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 15 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 12.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 4.85mm |
| Typical Gate Charge @ Vgs | 19 nC @ 4.5 V, 37 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 3.9mm |
| Height | 1.55mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1V |