N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG
- RS Stock No.:
- 171-3608
- Mfr. Part No.:
- TSM090N03CP ROG
- Manufacturer:
- Taiwan Semiconductor
2500 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (On a Reel of 2500)
MYR3.907
| Units | Per Unit | Per Reel* |
| 2500 - 2500 | MYR3.907 | MYR9,767.50 |
| 5000 - 7500 | MYR3.821 | MYR9,552.50 |
| 10000 + | MYR3.75 | MYR9,375.00 |
| *price indicative | ||
- RS Stock No.:
- 171-3608
- Mfr. Part No.:
- TSM090N03CP ROG
- Manufacturer:
- Taiwan Semiconductor
Technical data sheets
Legislation and Compliance
Product Details
The Taiwan Semiconductor 30V, 55A, 3+Tab pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode.
RoHS compliant
150 °C maximum operating temperature
40W max. power dissipation
Gate threshold voltage ranges between 1V-2.5V
150 °C maximum operating temperature
40W max. power dissipation
Gate threshold voltage ranges between 1V-2.5V
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 55 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 13 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 40 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Typical Gate Charge @ Vgs | 7.5 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Length | 6.5mm |
| Number of Elements per Chip | 1 |
| Width | 5.8mm |
| Height | 2.3mm |
| Forward Diode Voltage | 1V |