Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 Toshiba T2N7002BK
- RS Stock No.:
- 171-2528
- Mfr. Part No.:
- T2N7002BK
- Manufacturer:
- Toshiba
2000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
1700 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 100)
MYR0.389
| Units | Per Unit | Per Pack* |
| 100 - 700 | MYR0.389 | MYR38.90 |
| 800 - 1400 | MYR0.359 | MYR35.90 |
| 1500 + | MYR0.321 | MYR32.10 |
| *price indicative | ||
- RS Stock No.:
- 171-2528
- Mfr. Part No.:
- T2N7002BK
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- TH
Product Details
High-Speed Switching
ESD(HBM) level 2 kV
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 400 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.75 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.1V |
| Minimum Gate Threshold Voltage | 1.1V |
| Maximum Power Dissipation | 1 W |
| Maximum Gate Source Voltage | ±20 V |
| Typical Gate Charge @ Vgs | 0.39 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Width | 1.3mm |
| Length | 2.9mm |
| Number of Elements per Chip | 2 |
| Forward Diode Voltage | 1.1V |
| Height | 0.9mm |