N-Channel MOSFET, 65 A, 40 V, 3-Pin DPAK Toshiba TK65S04N1L
- RS Stock No.:
- 171-2428
- Mfr. Part No.:
- TK65S04N1L
- Manufacturer:
- Toshiba
2000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (On a Reel of 2000)
MYR5.535
| Units | Per Unit | Per Reel* |
| 2000 + | MYR5.535 | MYR11,070.00 |
| *price indicative | ||
- RS Stock No.:
- 171-2428
- Mfr. Part No.:
- TK65S04N1L
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- JP
Product Details
Applications
Automotive
Motor Drivers
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)
Automotive
Motor Drivers
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 65 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 107 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +175 °C |
| Length | 6.5mm |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 7mm |
| Forward Diode Voltage | 1.2V |
| Automotive Standard | AEC-Q101 |
| Height | 2.3mm |