N-Channel MOSFET, 300 A, 30 V, 8-Pin DSOP Toshiba TPWR8503NL
- RS Stock No.:
- 171-2373
- Mfr. Part No.:
- TPWR8503NL
- Manufacturer:
- Toshiba
Available for back order.
Added
Price Each (In a Pack of 2)
MYR16.68
| Units | Per Unit | Per Pack* |
| 2 + | MYR16.68 | MYR33.36 |
| *price indicative | ||
- RS Stock No.:
- 171-2373
- Mfr. Part No.:
- TPWR8503NL
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
Product Details
High-Efficiency DC-DC Converters
Switching Voltage Regulators
High-speed switching
Small gate charge: QSW = 16 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 4.5 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
Switching Voltage Regulators
High-speed switching
Small gate charge: QSW = 16 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 4.5 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | DSOP |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 1.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.3V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 142 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 5mm |
| Typical Gate Charge @ Vgs | 74 nC @ 10 V |
| Length | 5mm |
| Forward Diode Voltage | 1.2V |
| Height | 0.73mm |