NDT3055 N-Channel MOSFET, 4 A, 60 V, 3+Tab-Pin SOT-223 Fairchild

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 4 A
Maximum Drain Source Voltage 60 V
Package Type SOT-223
Mounting Type Surface Mount
Pin Count 3 + Tab
Maximum Drain Source Resistance 180 mΩ
Channel Mode Enhancement
Maximum Power Dissipation 3 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Minimum Operating Temperature -65 °C
Transistor Material Si
Width 3.7mm
Maximum Operating Temperature +150 °C
Length 6.7mm
Forward Diode Voltage 1.2V
Typical Gate Charge @ Vgs 9 nC @ 10 V
Height 1.7mm
24000 In Global stock for delivery within 4 - 6 working days
Price Each (On a Reel of 4000)
MYR 1.416
units
Per unit
Per Reel*
4000 +
MYR1.416
MYR5,664.00
*price indicative
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