N-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK onsemi RFD3055LESM9A
- RS Stock No.:
- 166-3195
- Mfr. Part No.:
- RFD3055LESM9A
- Manufacturer:
- onsemi
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Added
Price Each (On a Reel of 2500)
MYR1.606
| Units | Per Unit | Per Reel* |
| 2500 + | MYR1.606 | MYR4,015.00 |
| *price indicative | ||
- RS Stock No.:
- 166-3195
- Mfr. Part No.:
- RFD3055LESM9A
- Manufacturer:
- onsemi
Legislation and Compliance
Product Details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 11 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 107 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 38 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Width | 6.22mm |
| Length | 6.73mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 9.4 nC @ 10 V |
| Height | 2.39mm |
| Minimum Operating Temperature | -55 °C |