IRF7832PBF N-Channel MOSFET, 20 A, 30 V HEXFET, 8-Pin SOIC Infineon

  • RS Stock No. 165-7576
  • Mfr. Part No. IRF7832PBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 20 A
Maximum Drain Source Voltage 30 V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 4.8 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.32V
Minimum Gate Threshold Voltage 1.39V
Maximum Power Dissipation 2.5 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 4mm
Series HEXFET
Maximum Operating Temperature +155 °C
Length 5mm
Transistor Material Si
Height 1.5mm
Typical Gate Charge @ Vgs 34 nC @ 4.5 V
665 In Global stock for delivery within 4 - 6 working days
Price Each (In a Tube of 95)
MYR 5.388
units
Per unit
Per Tube*
95 +
MYR5.388
MYR511.86
*price indicative
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